The two electrodes were kept in parallel with a gap of 1 cm. The deposition was carried out for 10 min by applying a constant DC voltage of 100 V. After the EDP and drying in air, the SCNT film on the Si wafer was put into a diluted nitric acid solution to remove possible surviving Mg(OH)2 on the surface. The doping was carried out by means of dipping the SCNT film in a 0.3 mM hydrogen tetrachloroaurate(III) trihydrate (HAuCl4·3H2O) solution learn more at different times. After drying in nitrogen atmosphere, the SCNT film was slowly dipped into deionized water. The SCNT film was peeled from the Si substrate and floated on the water surface. And then the n-type-patterned Si
wafer with the thickness of 250 μm and the resistivity selleck kinase inhibitor of 1 to 10 Ω·cm, which was pre-deposited with a square SiO2 layer of about 300 nm thickness, was immersed into the water to pick up the expanded SCNT films. Finally, the carbon paste was deposited on the SCNT films to form the upper electrode, and a layer of Au with the thickness of approximately 10 nm was deposited on the back side of the patterned Si wafer as the back electrode. The whole process of the heterojunction solar cells of SCNT and Si substrate is illustrated in Figure 1. Figure 1 Schematic diagrams of the EDP, doping and the configuration of a SCNT-on-silicon heterojunction solar cell. (a) EDP SCNT film. (b) Removing Mg(OH)2 or Mg+ covered on
the SCNT film in dilute nitric acid solution. (c) Doping the SCNT film in HAuCl3·H2O solution. (d) A Si substrate covered with SCNTs was slowly dipped into deionized water, and a SCNT film was peeled from the Si substrate and floated on water surface. (e) A patterned silicon wafer with a square SiO2 layer was used to pick up the SCNT film. (f) The configuration of a SCNT-on-silicon heterojunction solar cell. The morphology of SCNT network before and after doping was characterized by field emission scanning electronic microscope (FESEM) and transmission electronic
microscope (TEM). The Raman spectra were measured with a laser Raman spectrophotometer. The excitation wavelength of the Ar ion laser was 514.5 nm. An ultraviolet–visible spectrometer (Varian Cary 100; Varian Cyclin-dependent kinase 3 Inc., Palo Alto, CA, USA) was used to study the absorption of the SCNT film. The resistance of SCNT film was measured by a four-point probe method. The carrier density and mobility for the pristine SCNT film and doping film were measured with a Hall effect measurement system (Bio-Rad Corp. Hercules, CA, USA). An Oerlikon external quantum efficiency (EQE) measurement system (Oerlikon Co., Pfaffikon, Switzerland) was used to obtain the EQE of solar cells. The characteristics of cell performance were measured under the standard conditions (1 sun, AM 1.5 Global spectrum), using a Berger Flasher PSS 10 solar simulator (Berger Lichttechnik GmbH & Co. KG, Pullach im Isartal, Germany).