The cleaned Ge (001) surface showed a buckled dimer structure with a low, missing-dimer defect distribution. There are two main buckled dimer structures: the symmetric dimer phase p (2 × 1) configuration and the c (4 × 2) configuration [18, 19]. This phase difference is caused by thermal excitation of the flip-flop motion of buckled dimers at room temperature and the interaction force between the tip apex and dimer rows [20, 21]. Here, A = 6.5 nm, V AC = 150 mV, selleck products ∆f = -68.5Hz, and modulation frequencies

in FM- and HAM-KPFMs are identical to the previous SNR measurements, respectively. The scanning area was 4 nm × 4 nm. Figure 4 shows the topographic and SNS-032 concentration potential images and the potential line profiles taken by FM- and HAM-KPFMs. Figure 4a,c depicts topographies,

and Figure 4b,d shows the corresponding potential images taken simultaneously on Ge (001) by FM- and HAM-KPFMs, respectively. From these results, it can be seen that atomic resolution cannot be observed with FM-KPFM; on the other hand, atomic resolution see more was obtained in HAM-KPFM in topographic and potential images. Furthermore, low frequency noise can clearly be observed in FM-KPFM while this noise disappeared in HAM-KPFM. Consequently, the potential image obtained by HAM-KPFM shows a clearer contrast than that of FM-KPFM. The reason for this is that the SNR in HAM-KPFM is higher than in FM-KPFM. This difference in potential measurements from the reference [12] between FM- and HAM-KPFM is because check details the steady state for FM-KPFM is usually at high voltage (V DC approximately at 1 V) and this voltage easily makes the dimer atoms on the surface adsorbing to the tip apex to form double covalent bonding with the surface atoms. Besides, the influence of the topographic measurement

seriously affects the potential images with high AC bias voltage. In contrast, for HAM-KPFM, this phenomenon can be ignored (the results are not shown here).These results demonstrated that the HAM-KPFM has a higher potential resolution and lower crosstalk than FM-KPFM. Figure 4 The topographic and potential images and the potential line profiles taken by FM- and HAM-KPFMs. (a, c) Topographic and (b, d) potential images taken simultaneously on the Ge (001) surface obtained by FM- and HAM-KPFMs, respectively. In the potential image, a bright (dark) spot indicates high (low) potential, which is repulsive (attractive) to electrons. (e, f) Cross-sectional profiles measured on the potential (b, d) images along the lines, respectively. The modulation frequency for FM (HAM)-KPFM is 500 Hz (1.045 MHz), respectively. Experimental parameters used in FM- and HAM-KPFMs: A = 6.5 nm, V AC = 150 mV, the frequency shift was set at -6.5 Hz for AFM imaging. Quantitatively, the potential line profile contrast is shown in Figure 4e,f.